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Electrical properties of CdTe:P single crystals at low and high temperatures

dc.contributor.authorFochuk, Petro
dc.contributor.authorSniala, Yuliia
dc.contributor.authorArmani, Nicola
dc.contributor.authorGrill, Roman
dc.date.accessioned2025-03-03T06:12:24Z
dc.date.available2025-03-03T06:12:24Z
dc.date.issued2024
dc.identifier.urihttps://hdl.handle.net/20.500.14178/2925
dc.description.abstractHigh-temperature (470-1170 K) properties of CdTe:P single crystals, grown by Bridgman technique, with an initial concentration of impurities in the melt 1x10(19) at/cm(3), were investigated by measuring of the Hall effect. Experimental results indicate that up to the temperature of similar to 700 K samples had p-type conductivity and above similar to 940 K - n-type one. Character of isothermal dependences of Hall constant strongly differs from the dependence of the undoped material due to the influence of impurities. Acceptor effect of phosphorus is observed up to 1170 K, it shows a high content of acceptor impurity form (P-Te). The low-temperature electric measurements data confirm the fact of phosphorus high solubility in CdTe. The results of IR microscopy indicate that the introduction of phosphorus into CdTe crystal resulted in almost complete eliminatio n of second phase inclusions with size >= 1 mu m, which are usually present in such material.en
dc.language.isoen
dc.relation.urlhttps://doi.org/10.15330/pcss.25.2.352-361
dc.rightsCreative Commons Uveďte původ 3.0 Unportedcs
dc.rightsCreative Commons Attribution 3.0 Unporteden
dc.titleElectrical properties of CdTe:P single crystals at low and high temperaturesen
dcterms.accessRightsopenAccess
dcterms.licensehttps://creativecommons.org/licenses/by/3.0/legalcode
dc.date.updated2025-03-03T06:12:24Z
dc.subject.keywordcadmium tellurideen
dc.subject.keywordphosphorusen
dc.subject.keywordHall effecten
dc.subject.keywordpoint defectsen
dc.subject.keywordhigh-temperature measurementsen
dc.identifier.eissn2309-8589
dc.relation.fundingReferenceinfo:eu-repo/grantAgreement/UK/COOP/COOP
dc.date.embargoStartDate2025-03-03
dc.type.obd73
dc.type.versioninfo:eu-repo/semantics/publishedVersion
dc.identifier.doi10.15330/pcss.25.2.352-361
dc.identifier.utWos001265570800018
dc.identifier.eidScopus2-s2.0-85201201807
dc.identifier.obd662390
dc.subject.rivPrimary10000::10300::10302
dcterms.isPartOf.nameFìzika ì chìmìja tverdogo tìla
dcterms.isPartOf.issn1729-4428
dcterms.isPartOf.journalYear2024
dcterms.isPartOf.journalVolume25
dcterms.isPartOf.journalIssue2
uk.faculty.primaryId116
uk.faculty.primaryNameMatematicko-fyzikální fakultacs
uk.faculty.primaryNameFaculty of Mathematics and Physicsen
uk.department.primaryId1191
uk.department.primaryNameFyzikální ústav UKcs
uk.department.primaryNameInstitute of Physics of Charles Universityen
dc.description.pageRange352-361
dc.type.obdHierarchyCsČLÁNEK V ČASOPISU::článek v časopisu::původní článekcs
dc.type.obdHierarchyEnJOURNAL ARTICLE::journal article::original articleen
dc.type.obdHierarchyCode73::152::206en
uk.displayTitleElectrical properties of CdTe:P single crystals at low and high temperaturesen


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